Part Number Hot Search : 
RCA13R M3A11FBA CD5255B 0C188 H224K 0FK152J SMAJ18 D52FU
Product Description
Full Text Search
 

To Download AS7C3256A-8 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 March 2005 Preliminary Information
AS7C3256A-8
(R)
3.3V 32K X 8 CMOS SRAM (Common I/O) Features
* Organization: 32,768 words x 8 bits * High speed - 8 ns address access time - 5 ns output enable access time * Very low power consumption: ACTIVE - 216mW max @ 8 ns * Very low power consumption: STANDBY - 7.2 mW max CMOS I/O * Easy memory expansion with CE and OE inputs * TTL-compatible, three-state I/O * 28-pin JEDEC standard packages - 300 mil SOJ - 8 x 13.4 mm TSOP 1 * ESD protection 2000 volts * Latch-up current 200 mA
Logic block diagram
VCC GND Input buffer
Pin arrangement
28-pin TSOP 1 (8x13.4 mm) 28-pin SOJ (300 mil)
A0 A1 A2 A3 A4 A5 A6 A7
I/O7 Row decoder Sense amp 256 X 128 X 8 Array (262,144)
I/O0
OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
AS7C3256A
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
Column decoder
WE Control circuit OE CE
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3
AAAAAAA 8 9 10 11 12 13 14
Selection guide
-8 Maximum address access time Maximum output enable access time Maximum operating current Maximum CMOS standby current 8 5 60 2 Unit ns ns mA mA
3/22/05; v.1.0
Alliance Semiconductor
P. 1 of 9
Copyright (c) Alliance Semiconductor. All rights reserved.
AS7C3256A
AS7C3256A-8
(R)
Functional description
The AS7C3256A is a 3.3V high-performance CMOS 262,144-bit Static Random-Access Memory (SRAM) device organized as 32,768 words x 8 bits. It is designed for memory applications requiring fast data access at low voltage, including PentiumTM, PowerPCTM, and portable computing. Alliance's advanced circuit design and process techniques permit 3.3V operation without sacrificing performance or operating margins. The device enters standby mode when CE is high. CMOS standby mode consumes 7.2 mW. Normal operation offers 75% power reduction after initial access, resulting in significant power savings during CPU idle, suspend, and stretch mode. Equal address access and cycle time (tAA, tRC, tWC) of 8 ns with output enable access time (tOE) of 5 ns are ideal for highperformance applications. The chip enable (CE) input permits easy memory expansion with multiple-bank memory organizations. A write cycle is accomplished by asserting chip enable (CE) and write enable (WE) LOW. Data on the input pins I/O0-I/O7 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting chip enable (CE) and output enable (OE) LOW, with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When chip enable or output enable is high, or write enable is low, output drivers stay in high-impedance mode. All chip inputs and outputs are TTL-compatible. Operation is from a single 3.3 0.3V supply. The AS7C3256A is packaged in high volume industry standard packages.
Absolute maximum ratings
Parameter Voltage on VCC relative to GND Voltage on any pin relative to GND Power dissipation Storage temperature (plastic) Ambient temperature with VCC applied DC current into outputs (low) Symbol Vt1 Vt2 PD Tstg Tbias IOUT Min -0.5 -0.5 - -65 -55 - Max +5.0 VCC + 0.5 1.0 +150 +125 20 Unit V V W
oC o
C
mA
Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Truth table
CE H L L L WE X H H L OE X H L X High Z High Z DOUT DIN Data Mode Standby (ISB, ISB1) Output disable (ICC) Read (ICC) Write (ICC)
Key: X = Don't care, L = Low, H = High
3/22/05; v.1.0
Alliance Semiconductor
P. 2 of 9
AS7C3256A-8
(R)
Recommended operating conditions
Parameter Supply voltage Input voltage Ambient operating temperature
IH CC
Symbol VCC VIH** VIL* commercial TA
Min 3.0 2.0 -0.5 0
Typical 3.3 - - -
Max 3.6 VCC+0.5 0.8 70
Unit V V V
o
C
* VIL min = -1.0V for pulse width less than 5ns. ** V max = V + 2.0V for pulse width less than 5ns.
DC operating characteristics (over the operating range)1
-8 Parameter Input leakage current Output leakage current Sym |ILI| |ILO| Test conditions VCC = Max, Vin = GND to VCC VCC = Max, VOUT = GND to VCC VCC = Max, CE VIL f = fMax, IOUT = 0mA VCC = Max, CE > VIH f = fMax VCC = Max, CE > VCC-0.2V VIN < 0.2V or VIN > VCC-0.2V, f = 0 IOL = 8 mA, VCC = Min IOH = -4 mA, VCC = Min Min - - - - Max 1 1 60 30 Unit A A mA mA
Operating power supply ICC current ISB Standby power supply current ISB1 VOL VOH
- - 2.4
2.0 0.4 -
mA V V
Output voltage
Capacitance (f = 1MHz, Ta = room temperature, VCC = NOMINAL)4
Parameter Input capacitance I/O capacitance Symbol CIN CI/O Signals A, CE, WE, OE I/O Test conditions Vin = 0V Vin = Vout = 0V Max 5 7 Unit pF pF
3/22/05; v.1.0
Alliance Semiconductor
P. 3 of 9
AS7C3256A-8
(R)
Read cycle (over the operating range)2,8
-8 Parameter Read cycle time Address access time Chip enable (CE) access time Output enable (OE) access time Output hold from address change CE LOW to output in low Z CE HIGH to output in high Z OE LOW to output in low Z OE HIGH to output in high Z Power up time Power down time Symbol tRC tAA tACE tOE tOH tCLZ tCHZ tOLZ tOHZ tPU tPD Min 8 - - - 3 3 - 0 - 0 - Max - 8 8 5 - - 3 - 3 - 10 Unit ns ns ns ns ns ns ns ns ns ns ns 4 3,4 3,4 3,4 3,4 3,4 3,4 2 2 Notes
Key to switching waveforms
Rising input Falling input Undefined output/don't care
Read waveform 1 (address controlled)2,5,6,8
tRC Address tAA Dout Data valid tOH
Read waveform 2 (CE controlled)2,5,7,8
tRC1 CE tOE OE tOLZ Dout tCLZ Supply current tPU 50% tACE Data valid tPD 50% ICC ISB tOHZ tCHZ
3/22/05; v.1.0
Alliance Semiconductor
P. 4 of 9
AS7C3256A-8
(R)
Write cycle (over the operating range)9
-8 Parameter Write cycle time Chip enable to write end Address setup to write end Address setup time Write pulse width Write recovery time Address hold from end of write Data valid to write end Data hold time Write enable to output in high Z Output active from write end Symbol tWC tCW tAW tAS tWP tWR tAH tDW tDH tWZ tOW Min 8 8 8 0 7 0 0 5 0 - 3 Max - - - - - - - - - 5 - Unit ns ns ns ns ns ns ns ns ns ns ns 3,4 3,4 3,4 Notes
Write waveform 1 (WE controlled)9
tWC tAW Address WE tAS Din tWZ Dout tWP tDW Data valid tOW tWR tDH tAH
Write waveform 2 (CE controlled)9
tAW Address tAS CE tWP WE tWZ Din Dout tDW Data valid tDH tCW tWR tWC tAH
3/22/05; v.1.0
Alliance Semiconductor
P. 5 of 9
AS7C3256A-8
(R)
AC test conditions
-
Output load: see Figure B Input pulse level: GND to 3.0V. See Figure A. Input rise and fall times: 2 ns. See Figure A. Input and output timing reference levels: 1.5V.
+3.3V Dout 350 320 C10 Dout Thevenin equivalent 168
+3.0V GND
90% 10% 2 ns
90% 10%
+1.72V
Figure A: Input pulse
GND Figure B: Output load
Notes
1 2 3 4 5 6 7 8 9 10 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. For test conditions, see AC Test Conditions, Figures A, B. These parameters are specified with CL = 5pF, as in Figures B. Transition is measured 500mV from steady-state voltage. This parameter is guaranteed, but not tested. WE is High for read cycle. CE and OE are Low for read cycle. Address valid prior to or coincident with CE transition Low. All read cycle timings are referenced from the last valid address to the first transitioning address. All write cycle timings are referenced from the last valid address to the first transitioning address. C=30pF, except on High Z and Low Z parameters, where C=5pF.
3/22/05; v.1.0
Alliance Semiconductor
P. 6 of 9
AS7C3256A-8
(R)
Package diagrams 28-pin SOJ
e D B A b Pin 1 A2 E c
28-pin SOJ Min Max in inches A A1 A2 B b c D E E1 E2 e
0.128 0.026 0.095 0.026 0.016 0.007 0.720 0.255 0.295 0.330 0.148 0.105 0.032 0.020 0.010 0.730 0.275 0.305 0.340
E1 E2
A1
Seating Plane
28-pin TSOP1
b e c L A2 A A1
0.050 BSC
28-pin TSOP1 8x13.4 mm Min Max A A1 A2 b c D e E Hd L
1.00 1.20 0.05 0.15 0.91 1.05 0.17 0.27 0.10 0.20 11.70 11.90 0.55 nominal 7.90 8.10 13.20 13.60 0.50 0.70 0 5
D Hd
E
3/22/05; v.1.0
Alliance Semiconductor
P. 7 of 9
AS7C3256A-8
(R)
Ordering information
Package Plastic SOJ, 300 mil TSOP 8x13.4mm
Temperature Commercial Commercial
8 ns
AS7C3256A-8JC AS7C3256A-8TC
Note: Add suffix `N'to the above part number for lead free parts. (Ex. AS7C3256A-8JCN)
Part numbering system
AS7C 3
Voltage: SRAM prefix 3 = 3.3V supply
256A
-XX
Packages:
X
C
Temperature range: C = 0 oC to 70 0C
X
N= Lead Free Part
Device number Access time J = SOJ 300 mil T = TSOP 8x13.4mm
3/22/05; v.1.0
Alliance Semiconductor
P. 8 of 9
(R)
AS7C3256A-8
(R)
Alliance Semiconductor Corporation 2575, Augustine Drive, Santa Clara, CA 95054 Tel: 408 - 855 - 4900 Fax: 408 - 855 - 4999 www.alsc.com
Copyright (c) Alliance Semiconductor All Rights Reserved Part Number: AS7C3256A-8 Preliminary Information Document Version: v.1.0
(c) Copyright 2003 Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a particular purpose, merchantability, or infringement of any intellectual property rights, except as express agreed to in Alliance's Terms and Conditions of Sale (which are available from Alliance). All sales of Alliance products are made exclusively according to Alliance's Terms and Conditions of Sale. The purchase of products from Alliance does not convey a license under any patent rights, copyrights; mask works rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or failure may reasonably be expected to result in significant injury to the user, and the inclusion of Alliance products in such lifesupporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use.


▲Up To Search▲   

 
Price & Availability of AS7C3256A-8

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X